Zhao, ChunMustafazade, ArifPandit, MilindSeshia A, AshwinSobreviela, GuillermoZou, Xudong2021-06-162021-06-162021Pandit, M., Mustafazade, A., Sobreviela, G., Zhao, C., Zou, X., & Seshia, A. A. (21 May 2021). Experimental Observation of Temperature and Pressure Induced Frequency Fluctuations in Silicon MEMS Resonators. Journal of Microelectromechanical Systems. p. 1-6.1057-71571941-0158https://hdl.handle.net/20.500.11779/1494https://doi.org/10.1109/JMEMS.2021.3077633Silicon MEMS resonators are increasingly being adopted for applications in timing and frequency control, as well as precision sensing. It is well established that a key limitation to performance is associated with sensitivity to environmental variables such as temperature and pressure. As a result, technical approaches to address these factors such as vacuum sealing and ovenization of the resonators in a temperature controlled system have been introduced. However, residual sensitivity to such effects can still serve as a significant source of frequency fluctuations and drift in precision devices. This is experimentally demonstrated in this paper for a precision oven-controlled and vacuum-sealed silicon resonators. The frequency fluctuations of oscillators constructed using two separate nearly-identical co-located resonators on the same chip are analysed and differential frequency fluctuations are examined as a means of reducing the impact of common-mode effects such as temperature and pressure. For this configuration, our results show that the mismatch of temperature and pressure coefficients between the resonators ultimately limits the frequency stability.eninfo:eu-repo/semantics/closedAccessSemiconductor device measurementResonatorsSilicon memsFrequency measurementTemperature sensorsResonant frequencySiliconNoise processesTemperature measurementPressure dependenceTemperature dependenceArticle10.1109/JMEMS.2021.30776332-s2.0-85107193670Q2Q11-6WOS:000673501700002